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Silicon Carbide Wafer
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4H-N/Semi Type SiC Ingot Dan Substrat Industrial Dummy 2 inci 3 inci 4 inci 6 inci

4H-N/Semi Type SiC Ingot Dan Substrat Industrial Dummy 2 inci 3 inci 4 inci 6 inci

Nama merek: ZMKJ
Nomor Model: Ingot SiC 6 inci
MOQ: 1 buah
harga: by case
Rincian kemasan: paket wafer tunggal di ruang pembersih kelas 100
Ketentuan Pembayaran: T/T, Western Union, MoneyGram
Informasi Rinci
Tempat asal:
Cina
Material:
SiC single crystal 4H-N type
Grade:
Dummy /Production grade
Thicnkss:
6-15mm
Suraface:
LP/as-cut
Application:
device maker polishing test
Diameter:
150.65±0.3mm
Menyediakan kemampuan:
1-50pcs/bulan
Menyoroti:

Ingot SiC 4H-N/Tipe Semi

,

Industri Dummy SiC Ingot

,

Substrat SiC Ingot 3 inci

Deskripsi Produk
Array