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Silicon Carbide Wafer
Created with Pixso.

4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate

4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate

Nama merek: ZMSH
Nomor Model: Wafer SiC 4 inci
MOQ: 10 buah
Rincian kemasan: Paket umum
Ketentuan Pembayaran: T/T
Informasi Rinci
Tempat asal:
Cina
Sertifikasi:
RoHS
Jenis:
4 jam
Nilai:
Boneka / Penelitian / Kelas produksi
Ketebalan:
Ukuran 350 mikron±25 mikron
Melengkung:
≤40 μm
Kekasaran:
Ra≤1nm
Diameter:
4 inci, 99,5mm~ 100,0mm
Deskripsi Produk
4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate 4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate What are Silicon Carbide (SiC) Wafers & Substrates? Silicon Carbide (SiC) wafers and substrates are specialized materials used in semiconductor technology made from silicon carbide, a compound known for its high thermal conductivity, excellent mechanical strength, and wide bandgap. Exceptionally hard and lightweight, SiC wafers and substrates provide a robust