Name: Wafer Epitaxial 4H-SiC untuk MOSFET Tegangan Ultra Tinggi (100 ‰ 500 μm, 6 inci)
Uploaded: 2026-03-09CDT00:47:59-05:00
Duration: 4 s
Description: Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.

Obrolan Hubungi kami

Wafer Epitaxial 4H-SiC untuk MOSFET Tegangan Ultra Tinggi (100 ‰ 500 μm, 6 inci)

Video Lainnya

September 02, 2025

Kata kunci: Silicon Carbide Wafer

Obrolan Hubungi kami

Tag:

#substrat silikon karbida #wafer sic #silikon pada wafer safir

Video Deskripsi:

Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.

Video Terkait