Tebal 350 um 2 Inci Single Crystal InP Semiconductor Substrat Prime

Obrolan Hubungi kami

Tebal 350 um 2 Inci Single Crystal InP Semiconductor Substrat Prime

Video Lainnya

February 20, 2023

Koneksi Kategori: Substrat Semikonduktor

Obrolan Hubungi kami

Tag:

#semikonduktor wafer #substrat wafer #substrat gasb

Singkat: Discover the high-quality Single Crystal InP Indium Phosphide Wafers with thickness ranging from 350-650um. Ideal for high-frequency, high-speed, and high-power microwave devices, these wafers are precision-engineered for superior performance in electronics and optics.

Fitur Produk terkait:

Crystal grown by liquid-sealed straight-drawing technology (LEC) for stable electrical performance.
Precise crystal orientation with deviation of only ±0.5° using X-ray directional instrument.
Polished by chemical mechanical polishing (CMP) technology for surface roughness <0.5nm.
Available in 2-inch, 3-inch, and 4-inch diameters with customizable specifications.
Cocok untuk pembuatan perangkat microwave frekuensi tinggi, kecepatan tinggi, dan daya tinggi.
Offers high electronic limit drift speed, good radiation resistance, and excellent heat conduction.
Can be doped with S+/Zn+/Fe+ for varied applications.
Packaged as 100 single or double side polished wafers for convenience.

FAQ:

Are you a trading company or manufacturer?

Shanghai Xinkehui New Materials Co. Ltd. is a trading company with close collaboration with manufacturers, providing high-quality semiconductor wafers for various applications.
Berapa lama waktu pengiriman Anda?

Waktu pengiriman biasanya 5-10 hari jika barang tersedia, atau 15-20 hari jika perlu diproduksi, tergantung pada jumlah yang dibutuhkan.
Do you provide samples? Is it free or extra?

Yes, we offer samples free of charge, but the customer is responsible for the freight costs.
What are your terms of payment?

For payments <= 1000 USD, 100% in advance. For payments >=1000 USD, 50% T/T in advance and the balance before shipment.